(a) For the soft-contact lithography process, the usualapplication methods of the resist of shallow structures is by usinga spinner. Suggest alternative choices for resist application fordeep (e.g. MEMS) features.
(b) Explain the options for a zero gap distance in contactlithography.
(c) Using schematics where necessary, describe;
(i) How diffraction effects modify the resist profile for positiveand negative resist.
(ii) Methods by which an ideal resist profile for a lift-offprocesses may be realised.
(d) A resist is applied by spinner giving a particular thickness.Describe possible strategies to double the resist thickness forthis resist.
