A Si npn transistor at T = 300K has an area of 10-3cm2 , neutral base width of 1µm, and dopingconcentrations of NE= 1018 cm-3,NB = 1017 cm-3, NC =1016 cm-3. Other semiconductor parameters areDB= DE =20 cm2/s, τE0=τB0= =10-7s, andτC0=10-6 s. Assuming the transistor is biasedin the active region and the recombination factor is unity,calculate current for (a) VBE = 0.5V; (b)IE=1.5 mA, (c) IB = 2µA
