An n-type silicon wafer undergoes a pre-deposition diffusionprocess with a constant surface concentration of boride gas; theresulting concentration of boron in silicon at the surface isestimated to be 1x1018 atoms cm-3. The background concentration oftrace boron atoms in the silicon wafer is estimated to be 1x1014cm-3. (A) Estimate the depth of the p-n junction below the surfacewhen the background doping concentration of the n-type impurity is3.45 x1016 cm-3; assume the diffusion process proceeds for 10minutes and has a diffusion parameter given by 10-12 cm2 s -1. (B)Estimate the number of boron atoms (per cm^2) introduced in thisthin surface layer following the pre-deposition step.
