calculate built-in potential, maximum electric field and widthof the depletion layer in Si p-n diode doped with donors andacceptors to concentration of 2x10^17cm^-3 and 5x10^16 cm^-3respectively
estimate the maximum voltage which can be safely applied to thediode descibed above
estimate density of reverse current in the diode desribed in topif the diffusion constants and the diffusion lengths of holes andelectrons are about 30cm^2/s and 100mm respectively
