Consider a pMOS transistor with VTH = –0.5 V, Kp = 40μA/V2 ,length, L = 0.25μm, and width, W = 1.25μm.
(a) Given that VSG = 1V, determine the range of values of VSDfor which the device is in the saturation region.
(b) Given that VSG = 1V, determine the range of values of VSDfor which the device is in the triode/linar region.
(c) Plot ISD vs VSG for operation in the saturation region.Ignore channel length modulation i.e. assume that λ = 0.
For the following parts, you will try to “bias†the transistorto meet your needs i.e. choose VSG and VSD. Assume length, L =0.25μm, and width, W = 1.25μm.
(d) What VSG should you use such that the transistor is insaturation and ISD = 252μA? Assume that λ = 0.
(e) For VSG should you use that the transistor is in trioderegion and its ON resistance is ron = 3kΩ?
