Consider a Si NPN BJT. Discuss how an change in one ofthe design parameters affect the emitter injection efficiency, thebase transport factor, the common emmiter current gain, and theearly voltage. Assume complete ionization. Further assume thecarrier mobility and the minority carrier lifetime are independentof the change in design parameters.
(a) Increase emitter doping
(b) Increase base doping
(c) Increase base width
(d) Increase collector doping
