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High-pressure oxidation In an oxidation system, increasing the gas pressure increases the parabolic reaction rate (by increasing...

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Chemistry

High-pressure oxidation

In an oxidation system, increasing the gas pressure increasesthe parabolic reaction rate (by increasing Ns). Ofcourse, the furnace become more complicated because the tube mustsealed up in order to pressurize it above normal atmosphericpressure.

In experiments, it’s been found that the parabolic rate isdirectly proportional to pressure – doubling the pressure doublesB.

Determine the time that would be required to grow 4.0 μm ofoxide using wet oxidation at 1150°C in a normal atmosphericpressure oxidation tube. The silicon wafer is initially bare andhas a (100) orientation.

To speed this up, we might consider increasing the pressure. Bywhat factor would the pressure have to be increased (i.e. by whatfactor would be B have to be increased) in order to grow the 4 μmin just 5 hours?

t (atmospheric) = ___________

factor = _____________

Answer & Explanation Solved by verified expert
3.9 Ratings (496 Votes)
1 the parabolic rate is directly proportional to pressure doubling the pressure doubles B    See Answer
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