High-pressure oxidation
In an oxidation system, increasing the gas pressure increasesthe parabolic reaction rate (by increasing Ns). Ofcourse, the furnace become more complicated because the tube mustsealed up in order to pressurize it above normal atmosphericpressure.
In experiments, it’s been found that the parabolic rate isdirectly proportional to pressure – doubling the pressure doublesB.
Determine the time that would be required to grow 4.0 μm ofoxide using wet oxidation at 1150°C in a normal atmosphericpressure oxidation tube. The silicon wafer is initially bare andhas a (100) orientation.
To speed this up, we might consider increasing the pressure. Bywhat factor would the pressure have to be increased (i.e. by whatfactor would be B have to be increased) in order to grow the 4 μmin just 5 hours?
t (atmospheric) = ___________
factor = _____________
