Q1
The mobility of carriers in a lightly doped silicon sample willdecrease if :
Select one:
a. The sample is doped N-type instead of P-type
b. None of these
c. All of these
d. The temperature is increased
e. The number of dopant atoms is decreased
Q2
Electron mobility in silicon is typically lower than holemobility.
Select one:
True
False
Q3 If a P-type silicon sample with a hole mobility of 370cm^2/Vs has an electric field of 18558 V/cm applied to it, thenwhat is the magnitude of the hole drift velocity in cm/s?
Q4
Which of the following is true?
Select one:
a. Indirect band gap semiconductors recombine through deep trapsin the band gap caused by impurities
b. Indirect band gap semiconductors can radiate energy in theform of light to recombine
c. The recombination time for an indirect band gap semiconductorcan vary from 10 milliseconds to 1 second
d. None of these
e. Gallium Arsenide (GaAs) has an indirect band gap, whileSilicon (Si) has a direct band gap
Q5
The average time a carrier travels between collisions in thecrystal is typically less than a picosecond.
Select one:
True
False
