1)Regarding the UTB(ultra-thin-body) MOSFET, why dothey use the raised source/drain technique ?
2)In the FinFET having the Fin height,Hfin, and Fin width, Wfin, , What is thechannel width of MOSFET, W?
3)Compare the three FinFET structures; tall, short andnanowire FinFET
4)Explain how FinFET can have shorter Lg,lower Ioff, and larger Ion than a single-gateMOSFET.
