(b) P-type doping in deep ultraviolet AlGaN based LEDs suffer
from low hole mobility.
(i) Sketch a...
90.2K
Verified Solution
Link Copied!
Question
Electrical Engineering
(b) P-type doping in deep ultraviolet AlGaN based LEDs sufferfrom low hole mobility.
(i) Sketch a design ofa tunnel junction for a DUV LED operating at 280 nm.
Explain how the tunnel junctionoperates in a DUV LED.
Answer & Explanation
Solved by verified expert
4.5 Ratings (816 Votes)
The photoelectric properties and physical mechanism of AlGaNbased deep ultraviolet light emitting diodes DUVLEDs with the superlattice ptype doping layer PSL are studied numerically and compared with the Alcomposition 50 conventional ptype layer AlGaNbased DUVLEDs The extraordinary design of DUVLEDs with varied barrier PSL have been investigated by Advance Physical Model of Semiconductor Devices APSYS software Through comparing the internal quantum efficiency IQE light output power
See Answer
Get Answers to Unlimited Questions
Join us to gain access to millions of questions and expert answers. Enjoy exclusive benefits tailored just for you!
Membership Benefits:
Unlimited Question Access with detailed Answers
Zin AI - 3 Million Words
10 Dall-E 3 Images
20 Plot Generations
Conversation with Dialogue Memory
No Ads, Ever!
Access to Our Best AI Platform: Zin AI - Your personal assistant for all your inquiries!
