The total current density in a semiconductor is given asconstant and Jtop = -20 A / cm ^ 2. Total current density is thesum of the hole drift current density and the electron diffusioncurrent densities. The hole density in the crystal is constant andp = 0.64 * 10 ^ 10 cm ^ -3. Electron density (to be written in xdistance micrometer) is given as n (x) = 2 * 10 ^ 15 * e ^ (- X /L) cm ^ -3 and L = 20 micrometer. Since the diffusion coefficientof electrons is Dn = 26 cm ^ 2 / s and the mobility of the holes isn = p = 440 cm ^ 2 / Vs:
a) Find the variation of the electron diffusion current densitydepending on the location and draw approximately by stating theimportant values,
b) Find the variation of the electric field applied to thesemiconductor depending on the location and draw the approximatevalues by drawing them approximately,
c) Find the variation of the hole drift current density dependingon the location and draw approximately by specifying the importantvalues.
I need quick answer please.Thank you
